SKU IPB120N10S4-05-1-1-1-1-1-1-2-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1-1 Category

FQH8N100C

Manufacturer: Onsemi

Category:

Discrete Semiconductor Products
transistor
FETs, MOSFETs
Single FETs, MOSFETs
Datasheet: Get PDF File
Date code: 22+
Description: MOSFET N-CH 1000V 8A TO247-3

Inventory: 16700

QTY (Tape & Reel (TR) Unit price Price
 

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Product Specification Parameters

TYPE
DESCRIPTION
Category
Discrete Semiconductor Products
transistor
FETs, MOSFETs
Single FETs, MOSFETs
Mr
onsemi
Series
QFET®
Package.Package
tube
Product Status
Obsolete
FET type
N Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 B
Current – Continuous Drain (Id) @ 25°C
8A (TC)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3220pF @ 25V
FET feature
–
Power Dissipation (Max)
225W (TC)
Operating temperature
-55°C ~ 150°C (TJ)
Mounting type
Through Hole
Supplier Device Package
TO-247-3
Package/Case
TO-247-3
Base product number
FQH8N100

 

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